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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-247 package *High voltage ,high speed *Low collector saturation voltage APPLICATIONS *Designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16206 Fig.1 simplified outline (TO-247) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 TC=100 CONDITIONS Open emitter Open base Open collector VALUE 1200 500 8 12 15 5.0 10 150 39 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 0.67 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA; IB=0 IE=1.0mA; IC=0 IC=3A ;IB=0.4A IC=6.5A ;IB=1.5A IC=6.5A ;IB=1.5A VCE=1200V,VBE=0 VCE=850V,VBE=0 VEB=8V; IC=0 IC=1A ; VCE=5V IC=10A ; VCE=5V IC=12A ; VCE=5V IC=0.5A ; VCE=10V;f=1.0MHz IE=0; f=100kHz ; VCB=10V 5 3 MIN 500 8 MJW16206 SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICES IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX UNIT V V 1.0 1.0 1.5 250 25 25 24 13 V V V A A 3.0 350 MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJW16206 Fig.2 Outline dimensions 3 |
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